The bipolar
junction transistors (BJT),
is one of the oldest but most famous transistors, that still
find their place in modern electronics. They come in many
classes and sizes to match your application, and with some
basic knowledge and some simple mathematical relations,
you can build very efficient while very simple switch circuits.
Using a transistor in the 'switching' configuration is indispensable
in many situation, where it is required to drive a relatively
important load, providing important currents, that most
controllers are not able to provide. |
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1.
Introduction
to the BJT.
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Before going on with the tutorial,
let us agree that we are going to discuss one among many other
configurations of Bipolar junction transistors. The same BJT can
be used in an audio amplifier or and FM receiver, however, usually
each model of BJTs is manufactured with specific characteristics
to make it more adequate to a certain application.
Configuring a transistor, means connecting to it a number of external
components and power sources in a very specific way to make if
function in a very specific and controllable way.
The BJT has 3 pins. The Base, the Collector, and the Emitter (see
figure 1). According to the configuration of the transistor, it
can be difficult to precisely say which one of those pins is input,
and which one is output, as they are all related, and all affect
each others somehow. However, in a switch configuration, this
is clearly defined: The Base current controls the flow of current
from the collector to the Emitter or vice-versa, depending on
the type of BJT.
There are two main types of BJTs: NPN and PNP. To make this as
simple as possible, we can say that the main difference between
those two types is the directions of the electric currents. This
can be seen in figure 1.A, where the direction of the arrow points
towards the direction of the current; In the NPN transistor, one
current flow from the base to 'inside' the transistor, and another
current flow from the collector to the Emitter, while in a PNP
transistor, all the directions are reversed, one current flows
from the 'inside' of the transistor to the base, and another one
flows from the emitter to the collector. From a functional point
of view, the difference between those two types, is the voltage
being provided to the load. As you can see in figure 1.A an NPN
transistor provides 0V when switched ON, while a PNP provides
12V. You will later understand why this affects the choice of
the type of transistor.
For simplicity, we are going to study only one of those two types:
the NPN BJT, but the same is applicable to PNP, taking into consideration
that all the currents are inversed.
Figure 1.A shows a very clear analogy between a real switch
(S1) and a transistor switch, where it is clear that the
base current will which ON or OFF the path of the current
from the collector to the emitter. There are some limitations
though as compared to a regular mechanical switch, which
are principally the direction of the current which is
fixed by the type of transistor and the magnitude of that
current which depends on the characteristics (also called
parameters and ratings) of the transistor.
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figure 1.A |
Knowing exactly the parameters of a transistor is essential to
be able to get the most out of it. The main required parameter
is the current gain factor between the base and collector current,
usually noted Hfe or
(Beta). Then it is important to also know the maximum currents
and power the transistor can dissipate as well as the maximum
applicable voltages across it's pins.
Those parameters, which can be found in the datasheet of the transistor,
will help us to determine the best value of the base resistance,
as you will see in the next section of this tutorial.
2.
Basic NPN switch configuration.
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The diagram shown in figure 2.A is the basic switch configuration
for an NPN transistor. You will encounter this figure
very often when analyzing different electronic circuits.
We will study how to 'configure' the transistor in switch
mode, by choosing the right base resistor with respect
to other parameters that we will consider fixed as the
Vcc voltage, the Current gain of the transistor, and the
Load resistance. To do this, there exists many methods.
I am proposing the simplest i've found, which is still
fully functional and precise. It goes through the following
steps:
1-Assume the transistor is in saturation mode:
By making such an assumption, the mathematical model of
the transistor becomes extremely simple, and some node
voltages become known like Vc. Actually,
we will find the value of the base resistor that justifies
such an assumption.
|

figure 2.A |
2- Determine the Collector saturation current:
With the assumption above, Vce (the voltage between
the collector and the emitter) is known and can be fetched from
the datasheet of the transistor. The emitter being connected to
GND, .
The current can be then calculated using the following relation:
Sometimes, the load Resistance
is unknown or irrelevant, like the resistance of the winding of
a relay; In such a case, knowing the required current to activate
the relay is sufficient.
If you don't have any mean of precisely knowing the value of the
collector current ( ),
then estimate it to the maximum probable value, after all the
current will never exceed what the load can support. However,
make sure that the collector current caused by the load does not
exceed the maximum rated current of the transistor.
3- Calculate the needed base current: Knowing
the Collector current, you can calculate the minimum base current
to reach that collector current using the following relation:
, Then,

4- Overdriving: Once you have calculated a base
current, if it's value is far below the maximum rated base current
of the transistor (from the datasheet), we may
overdrive the transistor, by multiplying the calculated base current
by a factor of 10 for example. This way, the resulting transistor
switch will be much more immune again changes in the load. In
other words, the performance of the transistor wont be reduced
if the load eventually increases due to any unknown reason. Be
careful not to exceed or even get too close to the maximum base
current defined in the datasheet of the transistor.
5- Calculate the needed value of :
Taking into consideration an overdriving factor of 10, the base
resistance
can be calculated using the following formula:
, Where V1 is the voltage controlling the transistor (see figure
2.A)
But the emitter being connected to ground, and the base to emitter
voltage being known (approximately 0.7V in most switching transistors),
and also assuming that V1 is a 5V TTL voltage, the formula can
be simplified to the following form:
Where you can still see that
is multiplied by 10 for overdriving.
When the value of
is known, the transistor is 'configured' to function as a switch,
also called 'in saturation and cut-off mode' where 'saturation'
is when the transistor is fully switched ON, and 'cut-off' is
when it is fully turned OFF and no current is passing through
the load.
Some common sense about the electric currents in a transistor:
When we say that ,
that does mean that the collector current has
to be equal to ' ',
neither that it is forced to be equal to that value. It simply
means that the collector of the transistor can sink or source
this amount of current. The actual value of the current will follow
Ohm's laws, like
any electrical current.
Calculation precautions:
When we assumed that the transistor was is saturation mode, we
also assumed some of its parameters were constant. This was not
exactly true. Actually those parameters change, mainly due to
increasing the collector current, and that's why it is safer to
overdrive. Each datasheet will present those variation of the
parameters as a table or as a graph. Anyway, you have to consider
those parameters into your calculations. For example, the table
in figure 2.B shows two parameters (among others) that considerably
change:
HFE ( )
changes according to the collector current, and the voltage VCEsat.
But VCEsat itself changes according to the
collector current and the base current.
Another part of the table is highlighted: the VBEsat,
which varies depending on collector and base current.
figure 2.B (Modified screenshot
of a datasheet from philips, © Philips Electronics
N.V. 1997) |
Calculation can become extremely complicated, as all the parameters
are tightly and complexly related, so the solution is to assume
the worst values. In other words, assume the smallest HFE,
the biggest VCEsat and VBEsat,
and at last, don't forget to overdrive the transistor, but increasing
the base current.
3.
Typical Transistor switch applications.
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It's a habit in ikalogic to always tightly bond
theory and practice, so here are a couple of example applications
using the very standard 2N2222 switching transistor.
3.1. Controlling a relay
A
very classic use of transistor in modern electronics is
to control 'electro-magnetic' relays, that incorporates
a coil, that sinks important amount of current (up to
200 mA), and generate feed-back voltages when switched
OFF. If you want a logic gate or a microcontroller to
control a relay, it is indispensable to use a transistor.
In figure 3.A, the base resistance is to be calculated
according to the required current to activate the coil
of the relay.
The Diode D1 is very important, it protects the transistor
from the current surges generated by the coil when switching
OFF. It is called a freewheeling diode, and it is a regular
rectifier diode like the 1N4007.
You can connect any 220V or 110V appliance to the output
of the relay. |

figure 3.A |
3.2. Connecting a transistor to an open-collector output:
Many
devices like the 8051 family of microcontrollers have
open-collector output ports. Such output configuration
is unable to 'source' any current, it can only sink current.
When connecting a switching transistor to such a device,
the position of the base resistance changes, to sink current
from the 5V power supply instead of the device that is
unable to do so.
This way you can calculate the base resistance normally
as described in this tutorial.
Note that the representation of the output device is just
for clarifying the concept of open collector output, but
in general, output ports are more complicated, and often
use FET transistors instead of BJTs, and is called 'open
drain' output, but the mechanism remains exactly the same
and is fully compatible with the configuration given in
figure 3.B |

figure 3.B |
3.2. Building NOR Logic gates:
Sometimes,
on a circuit, you need a single NOR logic gate, but you
don't want to use a 14 pin IC containing 4 gates, and
only use one of them.
Either due to the cost or due to the foot print (space
taken on the PCB), building a gate using a couple transistors
can be interesting. However, note that the frequency response
of such a gate depends on the characteristics and type
of the transistor, but below 100 Khz, you probably wont
notice any difference of behavior.
This method also allows you to build transistor with controllable
Input and output resistance. Decreasing the output resistance
(Ro) in this case would increase the power consumption
of the gate, but increase the output current.
It's up to you to find the compromise between the different
parameters. |

figure 3.C |
Figure
3D shows a NOR logic gate constructed using 2 2N2222 BJT
transistors. You can see the full schematic of this H-bridge
here. You can notice the
assembled gate takes relatively less space that a DIP14
logic IC (DIP stands for Dual Inline Package)
Note that you can also build a NAND logic gate using the
same two transistors by connecting them in series (not
in parallel as in figure 3C).
All those applications can be built on the complementary
PNP transistor 2N2907, with minor modifications. You just
have to consider that all the electric currents flow in
the opposite direction.
|

figure 3.D |
The H-Bridge is a very famous example application to switching
transistors, where 2 PNP and 2 NPN transistors are used, as in
the following schematic, or
in our 5A H-Brigde tutorial.
4.
Debugging transistor switch circuits.
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When a problem occurs in circuits containing many
transistors, is can be very problematic to know which one is defective,
specially when they are all soldered. I propose a bunch of tips
to help you find the problem in such a circuit in minimum time:
1- Temperature: If a transistor is getting hot, this probably
men there is a problem somewhere. But don't be too confident saying
that the problem is coming from the transistor getting hot. Usually
a defective transistor don't even get warm any more. This rise
of temperature can be caused by another transistor connected to
it. Bottom line: The temperature is an indication of the region
where things are going wrong.
2- Measure the VCE of the transistors. If
they are all of the same type, and all turned ON, they should
approximately have the same collector to emitter voltage. Finding
the transistor having a different VCE is
a quick way of detecting a dead transistor.
3- Measure the voltage across the base resistance. The voltage
across a base resistance should be relatively important (if the
transistor is switched ON). For a TTL (5V) device controlling
a NPN transistor, the voltage drop across the resistor should
be more than 3V. If there no remarkable voltage drop across the
base resistor, then either the transistor is dead, either the
device controlling the transistor has a problem. In both case,
the base current is equal to 0.
This concludes the BJT switches tutorial. I hope it was helpful
as straight forward enough for beginner and intermediate visitors.
If you find the level of electronics is this page too complicated,
I encourage you to read this tutorial.
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